A Ku-band image-rejection filtering LNA MMIC in 150-nm GaN-on-SiC technology

作     者：Huiyang LI Jinxu XU Xiuyin ZHANG 

作者机构：School of Electronic and Information EngineeringSouth China University of Technology School of MicroelectronicsSouth China University of Technology 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2024年第67卷第1期

页      面：318-319页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：supported in part by National Natural Science Foundation of China (Grant No.62371193) Key Research and Development Program of Guangzhou (Grant No.202103020002) China Postdoctoral Science Foundation (Grant No.2019M652894) 

摘      要：The low noise amplifier (LNA) is one of the most important circuits in the transceiver. Many high-performance LNAs have been demonstrated based on Ga N processes. For instance, by using a hybrid-matching topology with doubleshunt capacitors to achieve broadband impedance matching,