Diamond growth in a high temperature and high pressure Fe–Ni–C–Si system:Effect of synthesis pressure

作     者：刘杨 王志文 李博维 赵洪宇 王胜学 陈良超 马红安 贾晓鹏 Yang Liu;Zhiwen Wang;Bowei Li;Hongyu Zhao;Shengxue Wang;Liangchao Chen;Hongan Ma;Xiaopeng Jia

作者机构：State Key Laboratory of Superhard MaterialsCollege of PhysicsJilin UniversityChangchun 130012China Key Laboratory of Material Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2023年第32卷第12期

页      面：602-608页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos.51872112 and 51772120) 

主　　题：silicon-doped diamond crystal quality pressure effect nitrogen content 

摘      要：Pressure is one of the necessary conditions for diamond *** the influence of pressure on growth changes in silicon-doped diamonds is of great value for the production of high-quality *** work reports the morphology,impurity content and crystal quality characteristics of silicon-doped diamond crystals synthesized under different *** transform infrared spectroscopy shows that with the increase of pressure,the nitrogen content in the C-center inside the diamond crystal decreases.X-ray photoelectron spectroscopy test results show the presence of silicon in the diamond crystals synthesized by adding silicon *** spectroscopy data shows that the increase in pressure in the Fe-Ni-C-Si system shifts the Raman peak of diamonds from 1331.18 cm^(-1)to 1331.25 cm^(-1),resulting in a decrease in internal stress in the *** half-peak width decreased from 5.41 cm^(-1)to 5.26 cm^(-1),and the crystallinity of the silicon-doped diamond crystals improved,resulting in improved *** work provides valuable data that can provide a reference for the synthesis of high-quality silicon-doped diamonds.