Breaking the responsivity-speed dilemma of a-GaOx photodetector by alternating gate modulation

作     者：Zhongfang ZHANG Pengju TAN Xiaohu HOU Xiaolan MA Mengfan DING Shunjie YU Guangwei XU Xiaolong ZHAO Shibing LONG Zhongfang ZHANG;Pengju TAN;Xiaohu HOU;Xiaolan MA;Mengfan DING;Shunjie YU;Guangwei XU;Xiaolong ZHAO;Shibing LONG

作者机构：School of MicroelectronicsUniversity of Science and Technology of China 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2023年第66卷第12期

页      面：305-306页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：supported by National Natural Science Foundation of China (Grant Nos. 61925110  U20A20207  62004184  62004186  51961145110) 

摘      要：The gallium oxide(Ga2O3) based photodetectors are usually confronted with the typical challenge of the responsivity-speed(RS) dilemma, namely high photocurrent induces a long decay time, as shown in Figure 1(a). The RS dilemma involves a trade-off issue, which is independent of photoelectric materials.