In-situ nonvolatile and volatile modulation for optical neural networks
作者机构:University of MarylandDepartment of Materials Science&EngineeringCollege ParkMarylandUnited States University of MarylandInstitute for Research in Electronics and Applied PhysicsCollege ParkMarylandUnited States
出 版 物:《Advanced Photonics》 (先进光子学(英文))
年 卷 期:2023年第5卷第5期
页 面:1-2页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 12[管理学] 07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 1201[管理学-管理科学与工程(可授管理学、工学学位)] 070207[理学-光学] 081104[工学-模式识别与智能系统] 0835[工学-软件工程] 0803[工学-光学工程] 0811[工学-控制科学与工程] 0812[工学-计算机科学与技术(可授工学、理学学位)] 0702[理学-物理学]
摘 要:High-performance integrated optical memristors are crucial in developing optical neural networks based on in-memory *** devices are building blocks capable of modulating the transmission of a propagating mode in a multilevel and nonvolatile fashion,thus allowing storage and multiplication of analog signals in the same device.1 Chalcogenide phase change materials(PCMs)are candidates for high-performance devices.