Towards the controlled CVD growth of graphitic B-C-N atomic layer films： The key role of B-C delivery molecular precursor

作     者：Hao Wang Chong Zhao Lei Liu Zhi Xu Jiake Wei Wenlong Wang Xuedong Bai Enge Wang 

作者机构：In ternational Center for Quantum Materials School of Physics Peking University Beijing 100871 China Beijing National Laboratory for Condensed Matter Physics Institute of Physics Chinese Academy of Sciences Beijing 100190 China Collaborative Innovation Center of Quantum Matter Beijing 100871 China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2016年第9卷第5期

页      面：1221-1235页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Acknowledgements We acknowledge financial support from the National Natural Science Foundation of China （Nos. 21322304 and 51472267） and the National Basic Research Program of China （Nos. 2012CB933003 and 2013CB932603） and the Strategic Priority Research Program B of the Chinese Academy of Sciences （No. XDB07030100） of China. 

主　　题：graphitic B C N atomic layer,chemical vapor deposition,B C delivery precursor,minimized phase segregation 

摘      要：Graphene-like, ternary system B-C-N atomic layer materials promise highly tunable electronic properties and a plethora of potential applications. However, thus far, experimental synthesis of the B-C-N atomic layers normally yields a microscopic phase-segregated structure consisting of pure C and BN domains. Further, growing the truly ternary B-C-N phase layers with homogenous atomic arrangements has proven to be very challenging. Here, in designing a better- controlled process for the chemical vapor deposition （CVD） growth of B-C-N atomic layer films with the minimized C and BN phase segregation, we selected trimethyl borane （TMB）, a gaseous organoboron compound with pre-existing B--C bonds, as the molecular precursor to react with ammonia （NH3） gas that serves as the nitrification agent. The use of this unique B-C delivery precursor allows for the successful synthesis of high-quality and large-area B-C-N atomic layer films. Moreover, the TMB/NH3 reactant combination can offer a high level of tunability and control of the overall chemical composition of B-C-N atomic layers by regulating the relative partial pressure of two gaseous reactants. Electrical transport measurements show that a finite energy gap can be opened in the as-grown B-C-N atomic layers and its tunability is essentially dependent on the relative C to BN atomic compositions. On the basis of carefully controlled experiments, we show that the pre-existing B-C bonds in the TMB molecular precursor have played a crucial role in effectively reducing the C and BN phase segregation problem, thereby facilitating the formation of truly ternary B-C-N phase atomic layers.