Batch fabrication of MoS_(2) devices directly on growth substrates by step engineering

作     者：Lu Li Yalin Peng Jinpeng Tian Fanfan Wu Xiang Guo Na Li Wei Yang Dongxia Shi Luojun Du Guangyu Zhang Lu Li;Yalin Peng;Jinpeng Tian;Fanfan Wu;Xiang Guo;Na Li;Wei Yang;Dongxia Shi;Luojun Du;Guangyu Zhang

作者机构：Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing 100049China Songshan Lake Materials LaboratoryDongguan 523808China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2023年第16卷第11期

页      面：12794-12799页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0827[工学-核科学与技术] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Key Research and Development Program of China(Nos.2021YFA1202900 and 2021YFA1400502) the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(No.XDB30000000) the National Natural Science Foundation of China(NSFC)(Nos.61888102,11834017,61734001,62122084,12274447,and 12074412) the Key-Area Research and Development Program of Guangdong Province(No.2020B0101340001) 

主　　题：substrate step engineering atomic layer deposition high-κdielectric molybdenum disulfide top-gate field-effect transistor 

摘      要：Monolayer molybdenum disulfide(MoS_(2))has emerged as one of the most promising channel materials for next-generation nanoelectronics and optoelectronics owing to its atomic thickness,dangling-bond-free flat surface,and high electrical ***,high-quality monolayer MoS_(2)wafers are primarily grown on sapphire substrates incompatible with conventional device fabrication,and thus transfer processes to a suitable substrate are typically required before the device can be ***,we demonstrate the batch production of transfer-free MoS2 top-gate devices directly on sapphire growth substrates via step *** introducing substrate steps on growth substrate sapphire,high-κdielectric layers with superior quality and uniform can be directly deposited on the epitaxially grown monolayer MoS_(2).For the substrate with a maximum step density of 100μm^(−1),the gate capacitance can reach~1.87μF∙cm^(−2),while the interface trap state density(Dit)can be as low as~7.6×10^(10)cm^(−2)∙eV^(−1).The direct deposition of high-quality dielectric layers on grown monolayer MoS2 enables the batch fabrication of top-gate devices devoid of transfer and thus excellent device yield of96%,holding great promise for large-scale twodimensional(2D)integrated circuits.