Exploration of high-speed 3.0 THz imaging with a 65 nm CMOS process

作     者：Min Liu Ziteng Cai Jian Liu Nanjian Wu Liyuan Liu Min Liu;Ziteng Cai;Jian Liu;Nanjian Wu;Liyuan Liu

作者机构：State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Faculty of Information TechnologyBeijing University of TechnologyBeijing 100124China 

出 版 物：《半导体学报:英文版》 (Journal of Semiconductors)

年 卷 期：2023年第44卷第10期

页      面：78-85页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Project supported by the National Natural Science Foundation of China under Grant Nos.61874107 62075211 

主　　题：power detectors quantum cascade laser(QCL) CMOS image sensor(CIS) terahertz 

摘      要：This paper describes a promising route for the exploration and development of 3.0 THz sensing and imaging with FET-based power detectors in a standard 65 nm CMOS *** on the plasma-wave theory proposed by Dyakonov and Shur,we designed high-responsivity and low-noise multiple detectors for monitoring a pulse-mode 3.0 THz quantum cascade laser(QCL).Furthermore,we present a fully integrated high-speed 32×32-pixel 3.0 THz CMOS image sensor(CIS).The full CIS measures 2.81×5.39 mm^(2) and achieves a 423 V/W responsivity(Rv)and a 5.3 nW integral noise equivalent power(NEP)at room *** experiments,we demonstrate a testing speed reaching 319 fps under continuous-wave(CW)illumina-tion of a 3.0 THz *** results indicate that our terahertz CIS has excellent potential in cost-effective and commercial THz imaging and material detection.