Enhanced Field Emission from Large-Area Arrays of WlsO49 Pencil-Like Nanostructure
Enhanced Field Emission from Large-Area Arrays of WlsO49 Pencil-Like Nanostructure作者机构:State Key Lab of Optoelectronic Materials and Technologies and Guangdong Province Key Laboratory of Display Material and Technology School of Physics and Engineering Sun Yat-Sen University Guangzhou 510275
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2010年第27卷第6期
页 面:262-265页
核心收录:
学科分类:080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0803[工学-光学工程] 0702[理学-物理学]
基 金:Supported by the National Natural Science Foundation of China under Grant Nos 50725206,50802117,U0634002 and 50672135 the National Basic Research Program of China under Grant Nos 2003CB314701,2007CB935501 and 2010CB327703 the National High-Tech Research and Development Program of China under Grant No2008AA03A314 the Doctoral Foundation of Education Ministry of China under Grant No 20070558063 the Science and Technology Department of Guangdong Province the Department of Information Industry of Guangdong Province the Science and Technology Department of Guangzhou City
摘 要:Field enhancement and field screening are two major factors affecting field emission performance of arrays of quasi one-dimensional nanostruetures. We have observed enhanced field emission from large-area arrays of W18O49 pencil-like nanostructure due to both the effects of high aspect ratio and enlarged spacing between neighboring nanostructures. These arrays may be grown on silicon substrates by the multi-step thermal evaporation process. The spacing of nanotip-to-nanotip between neighboring nanostruetures may be increased by adjusting the growth temperature. The arrays are observed to have a typical turn-on field as low as about 1.26 MV/m and a threshold field as low as about 3.39 MV/m, resulting in increasing field enhancement and decreasing field screening effect.