Material Removal Characteristics of Single-Crystal 4H-SiC Based on Varied-Load Nanoscratch Tests

作     者：Kun Tang Wangping Ou Cong Mao Jie Liang Moke Zhang Mingjun Zhang Yongle Hu Kun Tang;Wangping Ou;Cong Mao;Jie Liang;Moke Zhang;Mingjun Zhang;Yongle Hu

作者机构：Hunan Provincial Key Laboratory of Intelligent Manufacturing Technology for High-performance Mechanical EquipmentChangsha University of Science and TechnologyChangsha 410114China 

出 版 物：《Chinese Journal of Mechanical Engineering》 (中国机械工程学报（英文版）)

年 卷 期：2023年第36卷第4期

页      面：125-138页

核心收录：

学科分类：08[工学] 080104[工学-工程力学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：Supported by National Natural Science Foundation of China(Grant No.51405034) Changsha Municipal Natural Science Foundation of China(Grant No.kq2202200) Hunan Provincial High-tech Industry Science and Technology Innovation Leading Program of China(Grant No.2022GK4027) 

主　　题：Single crystal silicon carbides Varied-load nanoscratch Material removal Crack propagation 

摘      要：Single-crystal silicon carbide(SiC)has been widely applied in the military and civil fields because of its excellent physical and chemical ***,as is typical in hard-to-machine materials,the good mechanical properties result in surface defects and subsurface damage during precision or ultraprecision *** this study,single-and double-varied-load nanoscratch tests were systematically performed on single-crystal 4H-SiC using a nanoindenter system with a Berkovich *** material removal characteristics and cracks under different planes,indenter directions,normal loading rates,and scratch intervals were analyzed using SEM,FIB,and a 3D profilometer,and the mechanisms of material removal and crack propagation were *** results showed that the Si-plane of the single-crystal 4H-SiC and edge forward indenter direction are most suitable for material removal and *** normal loading rate had little effect on the scratch depth,but a lower loading rate increased the ductile region and critical depth of ***,the crack interaction and fluctuation of the depth-distance curves of the second scratch weakened with an increase in the scratch interval,the status of scratches and chips changed,and the comprehensive effects of the propagation and interaction of the three cracks resulted in material fractures and chip *** calculated and experimental values of the median crack depth also showed good consistency and ***,this study provides an important reference for the high-efficiency and precision machining of single-crystal SiC to ensure high accuracy and a long service life.