Technology Dependency of TID Response for a Custom Bandgap Voltage Reference in 65 nm to 28 nm Bulk CMOS Technologies

作     者：LIANG Bin WEN Yi CHEN Jianjun CHI Yaqing YAO Xiaohu LIANG Bin;WEN Yi;CHEN Jianjun;CHI Yaqing;YAO Xiaohu

作者机构：College of Computer Science National University of Defense Technology 

出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))

年 卷 期：2023年第32卷第6期

页      面：1286-1292页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：supported by the National Natural Science Foundation of China (61974163, 62104257) the High-level Innovative Talent Training Plan of NUDT (4142D125106, 434517212306) 

主　　题：Voltage measurement Annealing Photonic band gap Gamma-rays Aerospace electronics CMOS technology Circuit synthesis 

摘      要：Total ionizing dose(TID) radiation response of the custom bandgap voltage reference(BGR)fabricated with 65 nm, 40 nm and 28 nm commercial bulk CMOS technologies is investigated. TID response is assessed employing Co-60 gamma ray source. The measurements indicate that the voltage reference is reduced by5.67% in 28 nm, 0.56% in 40 nm and increased by 1.28% in65 nm devices under irradiation up to 1.2 Mrad(Si) *** 48 hours of annealing, the voltage reference changes are just-1.84% in 28 nm, 0.14% in 40 nm and 1.14% in 65nm. The obtained results demonstrate that the custom BGR has naturally superior TID response due to the circuit design margins.