Architecture-circuit-technology co-optimization for resistive random access memory-based computation-in-memory chips
作者机构:School of Integrated Circuits Beijing National Research Center for Information Science and Technology(BNRist) Tsinghua University
出 版 物:《Science China(Information Sciences)》 (中国科学:信息科学(英文版))
年 卷 期:2023年第66卷第10期
页 面:152-161页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术(可授工学、理学学位)]
基 金:supported by National Natural Science Foundation of China (Grant Nos. 92064001, 62025111, 92264201) Beijing Advanced Innovation Center for Integrated Circuits
主 题:resistive random-access memory computation-in-memory compact model device-architecture-algorithm co-design compiler
摘 要:Computation-in-memory(CIM) chips offer an energy-efficient approach to artificial intelligence computing workloads. Resistive random-access memory(RRAM)-based CIM chips have proven to be a promising solution for overcoming the von Neumann bottleneck. In this paper, we review our recent studies on the architecture-circuit-technology co-optimization of scalable CIM chips and related hardware demonstrations. To further minimize data movements between memory and computing units, architecture optimization methods have been introduced. Then, we propose a device-architecture-algorithm co-design simulator to provide guidelines for designing CIM systems. A physics-based compact RRAM model and an array-level analog computing model were embedded in the simulator. In addition, a CIM compiler was proposed to optimize the on-chip dataflow. Finally, research perspectives are proposed for future development.