Superior multiphase interfaces in AgCuTe-based composite with significantly enhanced thermoelectric properties

作     者：Wenpei Li Zhonghai Yu Chengyan Liu Ying Peng Baoquan Feng Jie Gao Guojing Wu Xiaobo Bai Junliang Chen Xiaoyang Wang Lei Miao 

作者机构：Guangxi Key Laboratory of Information MaterialsElectronical Information Materials and Devices Engineering Research Center of Ministry of EducationSchool of Materials Science and EngineeringGuilin University of Electronic TechnologyGuilin 541004China Guangxi Key Laboratory of Precision Navigation Technology and ApplicationSchool of Information and CommunicationGuilin University of Electronic TechnologyGuilin 541004China 

出 版 物：《Journal of Advanced Ceramics》 (先进陶瓷（英文）)

年 卷 期：2023年第12卷第8期

页      面：1511-1520页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：This work is supported by the National Natural Science Foundation of China(Grant Nos.52262032,52273285,51961011,52061009,and U21A2054) the National Key R&D Program of China(Grant No.2022YFE0119100) 

主　　题：thermoelectric(TE)materials AgCuTe phase interface carrier scattering phonon scattering 

摘      要：It is common sense that a phase interface(or grain boundary)could be used to scatter phonons in thermoelectric(TE)materials,resulting in low thermal conductivity(k).However,a large number of impurity phases are always so harmful to the transport of carriers that poor TE performance is ***,we demonstrate that numerous superior multiphase(AgCuTe,Ag_(−2)Te,copper telluride(Cu_(2)Te and Cu_(2−x)Te),and nickel telluride(NiTe))interfaces with simultaneous strong phonon scattering and weak electron scattering could be realized in AgCuTe-based TE *** to the similar chemical bonds in these phases,the depletion region at phase interfaces,which acts as carrier scattering centers,could be ***,the power factor(PF)is obviously enhanced from~609 to~832μW·m^(−1)·K^(−2),and k is simultaneously decreased from~0.52 to~0.43 W·m^(−1)·K^(−1) at 636 ***,a peak figure of merit(zT)of~1.23 at 636 K and an average zT(zTavg)of~1.12 in the temperature range of 523–623 K are achieved,which are one of the best values among the AgCuTe-based TE *** study could provide new guidance to enhance the performance by designing superior multiphase interfaces in the TE materials.