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Approximate Well Width Formulas of 1.55 μm Possible Compositional In1-x-y GayAlxAs Strained Quantum-well Laser

Approximate Well Width Formulas of 1.55 μm Possible Compositional In1-x-y GayAlxAs Strained Quantum-well Laser

作     者:ZHANG Yejin CHEN Weiyou LIU Caixia LIU Shiyong (State Key Laboratory on Integrated Optoelectronics, Jilin University Region, Changchun 130023, China) 

出 版 物:《Chinese Journal of Lasers》 (中国激光(英文版))

年 卷 期:2001年第3期

页      面:12-14页

学科分类:070207[理学-光学] 07[理学] 0702[理学-物理学] 

基  金:theNationalScienceFundation (No .6 99370 19) JilinProvince′sScienceFundationforYouth (No .19990 5 2 9 2 ) and 86 3Progr 

主  题:In 1-x-y Ga y Al x As quantum well CAD band offset 

摘      要:We have used Harrison′s model and anisotropic parabolic approximation to calculate band structure of  In 1-x-y Ga y Al x As  compressively strained quantum well. For design of 1 55 μm wavelength lasers, well widths for the possible compositions are presented. A useful empirical formula is given.

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