Graphene quantum dots modulated solution-derived InGaO thin-film transistors and stress stability exploration

作     者：Xiao-Fen Xu Gang He Lei-Ni Wang Wen-Hao Wang Xiao-Yu Wu Xiao-Fen Xu;Gang He;Lei-Ni Wang;Wen-Hao Wang;Xiao-Yu Wu

作者机构：School of Materials Science and EngineeringAnhui UniversityHefei230601China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2023年第42卷第7期

页      面：2294-2306页

核心收录：

学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0811[工学-控制科学与工程] 0702[理学-物理学] 

基　　金：financially supported by the National Natural Science Foundation of China(No.11774001) Anhui Project(No.Z010118169) Open Fund Project of Zhejiang Engineering Research Center of MEMS in Shaoxing University(No.MEMSZJERC2202)。 

主　　题：Graphene quantum dots doped InGaO(GQDs-IGO) Thin-film transistors Stability Inverter Low-frequency noise 

摘      要：Graphene quantum dots(GQDs)doped InGaO(IGO)thin film transistors(TFTs)have been fabricated based on solution-driven ZrO_(x) as gate dielectrics.Compare to pure IGO TFTs,superior electrical performance of the GQDs-IGO TFTs can be achieved by adjusting the doping concentration.It has been demonstrated that GQDs-modified IGO TFTs devices with GQDs doping content of0.3 mg·ml^(-1)have the optimized performances,including field-effect mobility(μ_(FE))of 22.02 cm^(2)·V^(-1)·s^(-1),on/off current ratio(I_(on)/I_(off))of 7.06×10^(7),subthreshold swing(SS)of 0.09 V·dec^(-1),hysteresis of 0.04 V and interfacial trap states(D_(it))of 1.03×10^(12)cm^(-2).In addition,bias stress and illumination stress tests have been performed and excellent stability has been achieved for optimized GQDs-IGO-TFTs.The GQDs-IGO TFTs device showed smaller threshold voltage shift of 0.12 and 0.04 V under positive bias stress(PBS)test and negative bias stress(NBS)test for 3600 s,respectively.And it showed smaller threshold voltage shift of 0.27 and 0.34 V for red light under the PBS and NBS test for 3600 s,respectively.Meanwhile,it showed smaller threshold voltage shift of0.20 and 0.22 V for green light under PBS and NBS test for3600 s,respectively.It also showed smaller threshold voltage shift of 0.17 and 0.12 V for blue under the positive bias illumination stress(PBIS)test and negative bias illumination stress(NBIS)test for 3600 s,respectively.Lowfrequency noise(LFN)characteristics of GQDs-IGO/ZrO_(x)TFTs indicated that the noise source came from the fluctuations in mobility.Finally,a low voltage resistor-loaded unipolar inverter has been built based on GQDs-IGO/ZrO_(x)TFT,demonstrating good dynamic response behavior and a maximum gain of 7.4.These experimental results have suggested that solution-processed GQDs-IGO/ZrO_(x)TFT may envision potential applications in low-cost and large-area electronics.