High-dielectric loss black silicon decorated with multi-nanostructure for wide-band mid-infrared absorption

作     者：Shao-Xun Zhang Jia-Chen Wang Yong-Min Zhao Yu-Lu Han An-Jie Ming Feng Wei Chang-Hui Mao Shao-Xun Zhang;Jia-Chen Wang;Yong-Min Zhao;Yu-Lu Han;An-Jie Ming;Feng Wei;Chang-Hui Mao

作者机构：State Key Laboratory of Advanced Materials for Smart SensingGRINM Group Co.LtdBeijing100088China Department of Advanced Electronic MaterialsGRIMAT Engineering Institute Co.LtdBeijing101407China General Research Institute for Nonferrous MetalsBeijing100088China College of Bioscience and Resources EnvironmentBeijing University of AgricultureBeijing102206China GRINM(Guangdong)Institute for Advanced Materials and TechnologyFoshan528051China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2023年第42卷第7期

页      面：2447-2456页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 

基　　金：financially supported by the National Natural Science Foundation of China(No.61874137) Shandong Provincial Key Research and Development Program(No.2020CXGC010203) the National Key Research and Development Project(No.2019YFB2005705)。 

主　　题：Surface manufacturing Mid-infrared absorption Black silicon Multi-nanostructure Single-step etching 

摘      要：Because of the excellent light-trapping ability of black silicon,it has emerged as a versatile substrate for photothermic applications.In this paper,multi-nanostructured black silicon with wide-band mid-infrared absorption properties for application in pyroelectric detectors is reported.Black silicon is fabricated on a substrate surface masked by Ag nanoparticle arrays using single-step etching of C_(4)F_(8)and SF_(6)plasma.The low absorption of black silicon in the mid-infrared region is improved when a secondary nanostructure with Pt nanoparticles and SiO_(2)thin films is deposited on the surface of the prepared black silicon by microelectromechanical system(MEMS)processes.Electrons are scattered at particle boundary,resulting in dielectric loss to incident infrared(IR)region.Compared to single black silicon,the structure decorated with the multi-nanostructure can achieve higher infrared absorption,which is contributed to the high-dielectric loss properties of the Pt nanoparticles.Simulations and experiments show that the thickness of black silicon and number of layers of platinum particles contribute to mid-infrared absorption,with wavelength ranging from 2.5 to 20.0μm,and the absorption reaches~90%.The proposed absorber provides a promising solution for thermal detectors.