Construction of 3D/2D indium vanadate /graphite carbon nitride with nitrogen defects Z-scheme heterojunction for improving photocatalytic carbon dioxide reduction
作者机构：School of Chemistry and Chemical EngineeringNanjing University of Science and TechnologyNanjing 210094China
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2023年第154卷第23期
页 面：129-139页
核心收录：
学科分类：081702[工学-化学工艺] 07[理学] 081705[工学-工业催化] 08[工学] 0817[工学-化学工程与技术] 070304[理学-物理化学(含∶化学物理)] 0703[理学-化学]
基 金：financially supported by the National Natu-ral Science Foundation of China(No.52170110) the Key Project of Jiangsu Province Programs for Research and Development(No.BE2019115) the Top-notch Academic Programs Project of Jiangsu Higher Education Institutions.
主 题：Z-scheme heterojunction CO_(2)photoreduction g-C3N4,InVO4
摘 要：Indium vanadate (InVO4 ) possesses excellent potential in photocatalytic carbon dioxide (CO_(2) ) reduction, but further modifications of reducing charge recombination and increasing active sites are still needed. Herein, InVO4 /g-C3 N4 (InVO-CN) heterojunction composite photocatalysts were prepared via in situ formation of InVO4 nanoparticles on the lamellar structure of graphite carbon nitride (g-C3 N4 ) containing nitrogen (N) defects. Among these composites, 30% InVO-CN showed the best photoreduction performance for CO_(2) at normal temperature and pressure without sacrificial agent (carbon monoxide, CO: 20.14 μmol g–1 h–1;methane, CH4 : 3.46 μmol g–1 h–1 ), which were 1.8 and 2.8 times higher than these of pure g-C3 N4 and InVO4 . The excellent performance could be attributed to the enhancement of CO_(2) adsorption, and most importantly, the enhanced charge carrier separation and reduction capacity induced by the formation of Z-scheme heterojunction between InVO4 and g-C3 N4 . In this work, intimate heterojunction interfaces between materials were formed by introducing g-C3 N4 with defects in InVO4 , which provides a promising modification scheme.
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