Ultra-thin ALD CoO_(x)-ZnO heterogenous films as highly sensitive and environmentally friendly H_(2)S sensor

作     者：Qing-Min Hu Zhe Dong Gai-Xia Zhang Yu-Xi Li Shuang-Feng Xing Zhi-Heng Ma Bo-Yu Dong Bo Lu Shu-Hui Sun Jia-Qiang Xu Qing-Min Hu;Zhe Dong;Gai-Xia Zhang;Yu-Xi Li;Shuang-Feng Xing;Zhi-Heng Ma;Bo-Yu Dong;Bo Lu;Shu-Hui Sun;Jia-Qiang Xu

作者机构：NEST LabDepartment of ChemistryCollege of ScienceShanghai UniversityShanghai200444China Institut National de la Recherche Scientifique-Énergie Matériaux et Télécommunications VarennesVarennesQCJ3X 1S2Canada State Key Laboratory of Coal ConversionInstitute of Coal ChemistryChinese Academy of SciencesTaiyuan030001China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2023年第42卷第9期

页      面：3054-3063页

核心收录：

学科分类：07[理学] 080202[工学-机械电子工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0802[工学-机械工程] 0702[理学-物理学] 

基　　金：financially supported by the National Key Research and Development Program of China(No.2020YFB2008600) the financial support from China Scholarship Council(CSC) 

主　　题：Atomic layer deposition(ALD) Surface decoration CoO_(x)/ZnO active interfacial sites H_(2)S gas sensor 

摘      要：To obtain environmentally friendly,integrated and miniaturized gas sensors for the increasing request for the Internet of Things industry and other relative areas,the ultra-thin CoO_(x)/Zn O heterogeneous film with active interfacial sites was in-situ deposited on micro-electro-mechanical systems(MEMS)as H_(2)S *** layer deposition(ALD)was employed to in-situ fabricate the uniform Zn O thin *** CoO_(x)was deposited on ZnO surface to obtain CoO_(x)/Zn O heterojunction and active interfacial *** ultra-thin film(20 nm)with 50 ALD Co O_(x)decorated on 250 ALD Zn O displays excellent sensing performance,including very high response(4.45@200×10^(-9))and selectivity to H_(2)S with a limit of detection(LOD)of 0.38×10^(-9),long-term sensing stability,high response/recovery performance(7.5 s/15.7 s)and mechanical strength at 230。*** for the high sensing performance of CoO_(x)/Zn O have been confirmed by series of characterizations and density functional theory(DFT)*** film thickness with Debye length,the oxygen vacancies and the synergistic effect of active interfacial sites are main reasons for the high sensing *** strategy by fabrication of CoO_(x)/Zn O heterogeneous film within Debye length and employing synergistic effect of active interfacial sites offers a promising route for the design of environmentally friendly gas ***,the ALD technique offers a facile in-situ strategy and high-throughput fabrication of MEMS gas sensors.