Complete coverage of reduced graphene oxide on silicon dioxide substrates

作     者：Huang Jingfeng Melanie Larisika Chen Hu Steve Faulkner Myra A.Nimmo Christoph Nowak Alfred Tok Iing Yoong 

作者机构：School of Materials Science and Engineering Nanyang Technological University Institute for Sports Research Nanyang Technological University Austrian Institute of Technology (AIT) GmbH Center for Biomimetic Sensor Science School of Sport Exercise and Health Sciences Loughborough University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第8期

页      面：143-146页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Project supported by the Institute for Sports Research(ISR)of Nanyang Technological University(NTU),the National Institute for Health Research(NIHR)Diet,Lifestyle&Physical Activity Biomedical Research Unit based at University Hospitals of Leicester and Loughborough University,and the International Graduate School Bio-Nano-Tech a Joint Ph D Program of University of Natural Resources and Life Sciences Vienna(BOKU),the Austrian Institute of Technology(AIT)and NTU 

主　　题：graphene oxide reduced graphene oxide graphene growth field effect transistor 

摘      要：Reduced graphene oxide （RGO） has the advantage of an aqueous and industrial-scale production route. No other approaches can rival the RGO field effect transistor platform in terms of cost （〈US$1） and portability （millimetre scale）. However the large deviations in the electrical resistivity of this fabricated material prevent it from being used widely. After an ethanol chemical vapor deposition （CVD） post-treatment to graphene oxide with ethanol, carbon islets are deposited preferentially at the edges of existing flakes. With a 2-h treatment, the standard deviation in electrical resistance of the treated chips can be reduced by 99.95%. Thus this process could enable RGO to be used in practical electronic devices.