A novel multiscale simulation framework for low-dimensional memristors

作     者：Shurong Pan Li Liu Qijun Huang Jin He Hao Wang Sheng Chang 

作者机构：Key Laboratory of Artificial Micro-and Nano-Structures of Ministry of EducationSchool of Physics and TechnologyWuhan UniversityWuhan 430072China School of MicroelectronicsWuhan UniversityWuhan 430072China 

出 版 物：《Science China(Physics,Mechanics & Astronomy)》 (中国科学：物理学、力学、天文学（英文版）)

年 卷 期：2023年第66卷第7期

页      面：79-87页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.62074116,61874079,and 81971702) the Luojia Young Scholars Program 

主　　题：multiscale framework memristor planar monolayer transport properties MoS_(2) 

摘      要：In recent years,the memristor has been widely considered an emerging device,but it has rarely been *** obstacle is the change in the intrinsic atomic level when it *** the density functional theory(DFT),this atomic level change in structure cannot be *** molecular dynamics(MD),memristor electronic transport properties cannot be *** this study,we propose a novel multiscale simulation framework merging MD,DFT,and the nonequilibrium Green’s function method,which can reveal not only a memristor’s basic working mechanism but also its transport *** verify our framework’s availability in guiding innovative memristor design,a new type of memristor,a planar monolayer MoS_(2)-based memristor,is simulated for the first *** popped S atoms’effect on its carrier transport is revealed,which clarifies the working mechanism of the planar monolayer MoS_(2)-based memory *** hope that this framework can shed light on the analysis and design of low-dimensional memristors.