Fast UV-vis-NIR photoresponse of self-oriented F_(16)CuPc nanoribbons
作者机构：Institute of Electronic Paper DisplaysSouth China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Department of Materials and InterfacesWeizmann Institute of ScienceRehovot 76100Israel
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2023年第16卷第7期
页 面：9561-9568页
核心收录：
学科分类：07[理学] 070205[理学-凝聚态物理] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0701[理学-数学] 0702[理学-物理学]
基 金：The authors acknowledge the financial support by the 2019QN01C290 Guangdong Basic and Applied Basic Research Foundation(No.2021A1515012235) the Outstanding Young Scholar at South China Normal University,Science and Technology Program of Guangzhou(No.2019050001) Guangdong Provincial Key Laboratory of Optical Information Materials and Technology(No.2017B030301007).
主 题：fluorinated copper phthalocyanine nanoribbon planar array photodetector in situ integration
摘 要：Controlling the vapor-deposited nanoribbons to grow along a consistent orientation will enable the desired in situ integration of functional devices,representing a major technological advance compared to post-growth processing strategies.In this work,ntype F_(16)CuPc molecules are self-assembled into horizontally-oriented nanoribbons with a consistent growth axis after creating periodic hydrophobic nanogrooves on a sapphire surface.Consequently,electrodes are deposited directly on the growth substrate to enable in situ fabrication of photodetectors.Depending on the deposited electrodes,these horizontally-oriented nanoribbons are connected to form a monolithic photodetector with a large sensing area or an on-chip array of photodetectors with multiple detector units.This in situ integration strategy avoids potential structural damage and contamination from impurities associated with post-growth processing steps.Therefore,the vapor-deposited nanoribbons can retain their high quality during the device manufacturing process,which contributes to performance improvement.As a result,the in-situ integrated F_(16)CuPc photodetectors exhibit a sensitive response in the ultraviolet-visible-near-infrared(UV-vis-NIR)region.The response time is on the order of tens of milliseconds,the fastest record ever for the F_(16)CuPc-based photodetectors.Furthermore,statistics from an array of 6×6 photodetectors show little variation in their sensitivity and response time,and hence this in situ fabrication scheme will contribute to the implementation of on-chip integrated photodetectors with consistent performance based on bottom-up nanoribbons.Overall,this self-oriented growth provides a versatile option to achieve desired in-situ integrated functional devices based on bottom-up nanoribbons.
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