Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga_(2)O_(3)

作     者：Chao Wu Huaile He Haizheng Hu Aiping Liu Shunli Wang Daoyou Guo Fengmin Wu Chao Wu;Huaile He;Haizheng Hu;Aiping Liu;Shunli Wang;Daoyou Guo;Fengmin Wu

作者机构：Key Laboratory of Optical Field Manipulation of Zhejiang ProvinceDepartment of PhysicsZhejiang Sci-Tech UniversityHangzhou 310018China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第7期

页      面：54-59页

核心收录：

学科分类：081702[工学-化学工艺] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(No.62274148),Science Foundation of Zhejiang Sci-Tech University(Nos.22062337-Y,20062224-Y,22062291-Y) Guangxi key laboratory of precision navigation technology and application[Guilin University of Electronic Technology](No.DH202229) 

主　　题：Ga_(2)O_(3) hydrogels self-powered self-healing UV photodetector 

摘      要：Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable ***-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these ***-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their ***,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) *** self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after *** self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse *** a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.