Atomic-scale insight into the epitaxial growth mechanism and interfacial coupling of BNT film prepared by hydrothermal synthesis
作者机构：The State Key Laboratory of Materials-Oriented Chemical EngineeringCollege of Materials Science and EngineeringNanjing Tech UniversityNanjing 210009China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)Nanjing 210009China Jiangsu Collaborative Innovation Center for Advanced Inorganic Function CompositesNanjing 210009China
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2023年第164卷第33期
页 面：198-204页
核心收录：
学科分类：07[理学] 0806[工学-冶金工程] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学]
基 金：supported by the National Natural Science Foundation of China(NSFC)under grant No.51902155 the Priority Academic Program Development(PAPD)of Jiangsu Higher Education Institutions
主 题：Hydrothermal synthesis Growth mechanism Interfacial coupling AC-STEM Octahedral tilt
摘 要：Revealing the epitaxial growth mechanism and the interfacial coupling effect between oxide films will help to build a“structure-propertybridge for the design of microelectronic ***,the epitaxial growth mechanism and the interfacial coupling in Bi_(0.5)Na_(0.5)TiO_(3)/SrTiO_(3)(BNT/STO)heterointerfaces are investigated by the aberration-corrected scanning transmission electron microscopy,which is synthesized by a hydrothermal *** results illustrate that 4 mol/L NaOH leads to not only the epitaxial growth of the BNT film but also the mutual diffusion of *** uneven distribution of local elements in BNT films is observed and confirmed to impact the cation displacements of B-site and lattice ***,the overall trend of B-site cation displacement at the BNT/STO heterointerfaces is dominated by the interfacial ***,the oxygen octahedral tilt exhibits continuous tilt patterns of a^(0)a^(0)a^(0)-a−b^(0)c−-a^(0)a^(0)c−-a^(0)b−c−-a−b−c−from the substrate to BNT film due to the constraint of the substrate and presents a strong correlation with cation *** results are helpful to understand the underlying atomic structures and physical properties of BNT epitaxial thin films.
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