Erratum to:Carrier-driven magnetic and topological phase transitions in twodimensionalⅢ-Ⅴsemiconductors
作者机构:State Key Laboratory for Mechanical Behavior of MaterialsXi’an Jiaotong UniversityXi’an 710049China Center for Alloy Innovation and DesignXi’an Jiaotong UniversityXi’an 710049China Institute of SemiconductorsSouth China Normal UniversityGuangzhou 510631China
出 版 物:《Nano Research》 (纳米研究(英文版))
年 卷 期:2023年第16卷第2期
页 面:3604-3604页
核心收录:
学科分类:050302[文学-传播学] 05[文学] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0503[文学-新闻传播学] 0702[理学-物理学]
主 题:transitions phase magnetic
摘 要:The E-mail address of one corresponding author was unfortunately mistakenly *** error did not affect any of the conclusions from the published *** of Address correspondence to Jian Zhou,zhoujian@***;Fei Ma,mafei@***;Jingbo Li,jbli@***.