Recent progress of layered memristors based on two-dimensional MoS2

作     者：Wei TONG Yuan LIU Wei TONG;Yuan LIU

作者机构：Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of EducationSchool of Physics and ElectronicsHunan University 

出 版 物：《Science China(Information Sciences)》 (中国科学:信息科学(英文版))

年 卷 期：2023年第66卷第6期

页      面：26-35页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 081702[工学-化学工艺] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 

基　　金：supported by National Key R&D Program of China (Grant No. 2021YFA1200503) National Natural Science Foundation of China (Grant Nos. 51991340, 51991341, 52221001, U22A2074) 

主　　题：memristor switching mechanism MoS$_2$ 2D materials 

摘      要：Memristors are memory-capable electronic components that consist of two terminals and a switching layer, whose resistance can be adjusted by an applied bias voltage. Two-dimensional(2D)materials with ultrathin layered structures are used as switching layers to overcome the limitations of traditional resistive materials in reducing the memristor sizes, demonstrating their potential in memory, flexible electronics,neuromorphic computing, and other related fields. Particularly, MoS2is widely used as a representative 2D semiconductor, and the MoS2-based memristors have been intensively studied. In this review article, we have summarized the recent progress of MoS2-based memristors, including the fabrication process, device structure, device performance, switching mechanism, and synaptic applications. In addition, we also discussed the prospects and challenges for their future development.