Polythiophene Derivatives Carbonized Polymer Dots:Aggregation Induced Solid-State Fluorescence Emission
作者机构:Key Laboratory of Photochemical Conversion and Optoelectronic Materials and CityU-CAS Joint Laboratory of Functional Materials and DevicesTechnical Institute of Physics and ChemistryChinese Academy of SciencesBeijing 100049China The University of Manchester G.020 Chemistry BuildingM139PLManchesterUK School of Future TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Binzhou Institute of TechnologyWeiqiao-UCAS Science and Technology ParkBinzhouShandong 256606China
出 版 物:《Chinese Journal of Chemistry》 (中国化学(英文版))
年 卷 期:2023年第41卷第16期
页 面:1950-1956页
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070303[理学-有机化学] 0703[理学-化学]
基 金:the National Natural Science Foundation of China(Grant Nos.52272052 51972315 21873110 and 61720106014)
主 题:Carbonized polymer dots Aggregation induced emission Solid-state fluorescence Light-emitting devicesl Carbon Nanomaterials
摘 要:Comprehensive Summary Currently,solid-state fluorescent carbonized polymer dots(CPDs)have attracted attention increasingly due to their applications for optoelectronic ***,designing CPDs possessing solid-state fluorescence and clarifying the fluorescence mechanism remain ***,we initially synthesized a novel type of polythiophene derivatives CPDs,poly-4,4’-(thiophene-3,4-diyl)dibenzoic acid carbonized polymer dots(PDBA-CPDs)with solid-state ***,the structural and optical characterization revealed that the solid-state fluorescence originated from the aggregation induced emission of the *** brief,in aggregation state,the remaining polymer structure groups on the surface of the CPDs overlapped and weakened the non-radiative transition,enhancing solid-state fluorescence ***,three polythiophene-derived CPDs were designed to further demonstrate the aggregation induced solid-state fluorescence ***,owing to their unique properties of solid-state fluorescence,the white LEDs(light emitting diodes)were fabricated with high color rendering index(CRI)of 82.7 and CIE coordinates of(0.37,0.39)using commercial 460 nm chip.