Two-dimensional complementary gate-programmable PN junctions for reconfigurable rectifier circuit
作者机构：State Key Laboratory of ASIC and SystemSchool of MicroelectronicsFudan UniversityShanghai 200433China National Integrated Circuit Innovation CenterShanghai 201203China
出 版 物：《Nano Research》 (纳米研究（英文版）)
年 卷 期：2023年第16卷第1期
页 面：1252-1258页
核心收录：
学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0701[理学-数学] 0812[工学-计算机科学与技术（可授工学、理学学位）]
基 金：Authors acknowledge the financial supports from the Ministry of Science and Technology of China(No.2018YFE0118300) the National Key Research and Development Program of China(No.2018YFA0703703) the State Key Laboratory of ASIC&System(No.2021MS003) the Science and Technology Commission of Shanghai Municipality(No.20501130100).
主 题：two-dimensional(2D)material PN junction rectifier circuit complementary configuration
摘 要：The unique features of ambipolar two-dimensional materials open up a great opportunity to build gate-programmable devices for reconfigurable circuit applications,e.g.,PN junctions for rectifier circuits.However,current-reported rectifier circuits usually consist of one gate-programmable PN junction as the rectifier and one resistor as the load,which are not conductive to voltage output and large-scale integration.Here we propose an approach of complementary gate-programmable PN junctions to assemble reconfigurable rectifier circuit,which include two symmetric back-to-back black phosphorus(BP)/hexagonal boron nitride(h-BN)/graphene heterostructured semi-gate field-effect transistors(FETs)and perform complementary NP and PN junction like complementary metal-oxide-semiconductor(CMOS)circuit.The investigation exhibits that the circuit can effectively reconfigure the circuit with/without rectifying ability,and can process alternating current(AC)signals with the frequency prior 1 KHz and reconfiguration speed up to 25μs.We also achieve the reconfigurable rectifier circuit memory via complementary semi-floating gate FETs configuration.The complementary configuration here should be of low output impedance and low static power consumption,being beneficial for effective voltage output and large-scale integration.
维普期刊数据库