Chemically-induced active micro-nano bubbles assisting chemical mechanical polishing:Modeling and experiments

作     者：Lei XU Kihong PARK Hong LEI Pengzhan LIU Eungchul KIM Yeongkwang CHO Taesung KIM Chuandong CHEN Lei XU;Kihong PARK;Hong LEI;Pengzhan LIU;Eungchul KIM;Yeongkwang CHO;Taesung KIM;Chuandong CHEN

作者机构：School of Materials Science and EngineeringShanghai UniversityShanghai 200444China School of Mechanical EngineeringSungkyunkwan UniversityGyeonggi-do 16419Republic of Korea Research Center of Nano Science and TechnologyShanghai UniversityShanghai 200444China SKKU Advanced Institute of NanotechnologySungkyunkwan UniversityGyeonggi-do 16419Republic of Korea Baotou Research Institute of Rare EarthsBaotou 014030China 

出 版 物：《Friction》 (摩擦（英文版）)

年 卷 期：2023年第11卷第9期

页      面：1624-1640页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(No.51975343) Science and Technology Major Project of Inner Mongolia Autonomous Region in China(No.2021ZD0028) Shanghai Technical Service Center for Advanced Ceramics Structure Design and Precision Manufacturing(No.20DZ2294000) the China Scholarship Council 

主　　题：micro-nano bubbles mixed lubrication material removal mechanism chemical mechanical polishing(CMP) modeling 

摘      要：The material loss caused by bubble collapse during the micro-nano bubbles auxiliary chemical mechanical polishing(CMP)process cannot be *** this study,the material removal mechanism of cavitation in the polishing process was investigated in *** on the mixed lubrication or thin film lubrication,bubble-wafer plastic deformation,spherical indentation theory,Johnson-Cook(J-C)constitutive model,and the assumption of periodic distribution of pad asperities,a new model suitable for micro-nano bubble auxiliary material removal in CMP was *** model integrates many parameters,including the reactant concentration,wafer hardness,polishing pad roughness,strain hardening,strain rate,micro-jet radius,and bubble *** model reflects the influence of active bubbles on material removal.A new and simple chemical reaction method was used to form a controllable number of micro-nano bubbles during the polishing process to assist in polishing silicon oxide *** experimental results show that micro-nano bubbles can greatly increase the material removal rate(MRR)by about 400%and result in a lower surface roughness of 0.17 *** experimental results are consistent with the established *** the process of verifying the model,a better understanding of the material removal mechanism involved in micro-nano bubbles in CMP was obtained.