Macro Meso Response and Stress Wave Propagation Characteristics of MCT High-Voltage Switch Under Shock load

作     者：Yuyang Guo Chuang Chen Ruizhi Wang Enling Tang Yuyang Guo;Chuang Chen;Ruizhi Wang;Enling Tang

作者机构：Key Laboratory of Transient Physical Mechanics and Energy Conversion Materials of Liaoning ProvinceShenyang Ligong UniversityShenyang110159LiaoningChina 

出 版 物：《Defence Technology（防务技术）》 (Defence Technology)

年 卷 期：2024年第32卷第2期

页      面：317-335页

核心收录：

学科分类：082601[工学-武器系统与运用工程] 08[工学] 0826[工学-兵器科学与技术] 

基　　金：Youth Talent Project of Basic Scientific Research Project of Liaoning Province Education Department(Grant No.LJKZ0270) Youth Project of Basic Scientific Research Project of Liaoning Province Education Department(Grant No.LJKQZ2021055) 

主　　题：MCT Impact load Failure analysis Stress wave Numerical simulation 

摘      要：In order to study the dynamic and electrical coupling response characteristics of Metal Oxide Semiconductor Controlled Thyristor(MCT)high-voltage switch under the synergic action of mechanical load and high voltage,the separated Hopkinson pressure bar(SHPB)test system was used to simulate different impact load environments,and combined with the multi-layer high-voltage ceramic capacitor charging and discharging system,the instantaneous electrical signals of MCT high-voltage switch were *** with numerical simulation and theoretical analysis,the failure mode and stress wave propagation characteristics of MCT high voltage switch were *** mechanical and electrical coupling response characteristics and failure mechanism of MCT high voltage switch under dynamic load were revealed from macroscopic and microscopic *** results show that the damage modes of MCT high-voltage switches can be divided into non-functional damage,recoverable functional damage,non-recoverable damage and structural *** to the gap between the metal gate and the oxide layer,the insulating oxide layer was *** placing for a period of time,the elastic deformation of the metal gate partially recovered and the accumulated charge disappeared,which induced the recoverable functional damage failure of the *** addition,obvious cracks appeared on both sides of the monocrystalline silicon inside the MCT high-voltage switch,leading to unrecoverable damage of the device.