Regulating the Electrical and Mechanical Properties of TaS_(2) Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding

作     者：Fukang Deng Jianhong Wei Yadong Xu Zhiqiang Lin Xi Lu Yan-Jun Wan Rong Sun Ching-Ping Wong Yougen Hu Fukang Deng;Jianhong Wei;Yadong Xu;Zhiqiang Lin;Xi Lu;Yan-Jun Wan;Rong Sun;Ching-Ping Wong;Yougen Hu

作者机构：Shenzhen Institute of Advanced Electronic MaterialsShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen 518055People’s Republic of China Shenzhen Geim Graphene CenterInstitute of Materials ResearchShenzhen International Graduate SchoolTsinghua UniversityShenzhen 518055People’s Republic of China School of Materials Science and EngineeringGeorgia Institute of TechnologyAtlantaGA 30332USA 

出 版 物：《Nano-Micro Letters》 (纳微快报（英文版）)

年 卷 期：2023年第15卷第7期

页      面：278-292页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financial supports by the National Natural Science Foundation of China (62074154) Shenzhen Science and Technology Program (JCYJ20210324102208023, JSGG20210802153000002) 

主　　题：2D transition metal dichalcogenides 2H-TaS_(2) Flexibility Electromagnetic interference shielding 

摘      要：Low-dimensional transition metal dichalcogenides(TMDs) have unique electronic structure, vibration modes, and physicochemical properties, making them suitable for fundamental studies and cutting-edge applications such as silicon electronics, optoelectronics, and bioelectronics. However, the brittleness, low toughness,and poor mechanical and electrical stabilities of TMD-based films limit their application. Herein, a TaS_(2) freestanding film with ultralow void ratio of 6.01% is restacked under the effect of bond-free van der Waals(vdW) interactions within the staggered 2H-TaS_(2) *** restacked films demonstrated an exceptionally high electrical conductivity of 2,666 S cm^(-1), electromagnetic interference shielding effectiveness(EMI SE) of 41.8 dB, and absolute EMI SE(SSE/t) of 27,859 dB cm^(2) g^(-1), which is the highest value reported for TMD-based materials. The bond-free vdW interactions between the adjacent 2H-TaS_(2) nanosheets provide a natural interfacial strain relaxation, achieving excellent flexibility without rupture after 1,000 bends. In addition, the TaS_(2) nanosheets are further combined with the polymer fibers of bacterial cellulose and aramid nanofibers via electrostatic interactions to significantly enhance the tensile strength and flexibility of the films while maintaining their high electrical conductivity and EMI *** work provides promising alternatives for conventional materials used in EMI shielding and nanodevices.