Thickness effect on solar-blind photoelectric properties of ultrathinβ-Ga_(2)O_(3)films prepared by atomic layer deposition

作     者：王少青 程妮妮 王海安 贾一凡 陆芹 宁静 郝跃 刘祥泰 陈海峰 Shao-Qing Wang;Ni-Ni Cheng;Hai-An Wang;Yi-Fan Jia;Qin Lu;Jing Ning;Yue Hao;Xiang-Tai Liu;Hai-Feng Chen

作者机构：The Key Laboratory of Advanced Semiconductor Devices and MaterialsXi’an University of Posts&TelecommunicationsXi’an 710121China The State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologyXidian UniversityXi’an710071China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2023年第32卷第4期

页      面：707-713页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070205[理学-凝聚态物理] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Project supported by the Natural Science Basic Research Program of Shaanxi Province,China(Grant No.2022JQ-701) the Scientific Research Program Funded by Shaanxi Provincial Education Department,China(Grant No.21JK0919) 

主　　题：β-Ga_(2)O_(3) film thickness solar blind photodetectors photoelectric response 

摘      要：Theβ-Ga_(2)O_(3)films with different thicknesses are prepared by an atomic layer deposition *** influence of film thickness on the crystal quality is obvious,indicating that the thicker films perform better crystal quality,which is verified from x-ray diffraction(XRD)and scanning electron microscope(SEM)*** Ga_(2)O_(3)-based solar blind photodetectors with different thicknesses are fabricated and *** experimental results show that the responsivity of the photodetectors increases exponentially with the increase of the film *** photodetectors with inter-fingered structure based on 900 growth cyclesβ-Ga_(2)O_(3)active layers(corresponding film thickness of 58 nm)exhibit the best performances including a low dark current of 134 fA,photo-to-dark current ratio of 1.5×10^(7),photoresponsivity of 1.56 A/W,detectivity of 2.77×10^(14)Jones,and external quantum efficiency of 764.49%at a bias voltage of 10 V under 254-nm DUV *** photoresponse rejection ratio(R_(254)/R_(365))is up to 1.86×10^(5).In addition,we find that the photoelectric characteristics also depend on the finger spacing of the MSM *** the finger spacing decreases from 50μm to10μW,the photoresponsivity,detectivity,and external quantum efficiency increase significantly.