Local density of optical states calculated by the mode spectrum in stratified media
作者机构：Laboratory of Solid State Optoelectronics Information TechnologyInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China College of Future TechnologyUniversity of Chinese Academy of SciencesBeijing 101408China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China State Key Laboratory on Integrated OptoelectronicsInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Weifang Academy of Advanced Opto-electronic CircuitsWeifang 261021China
出 版 物：《Chinese Physics B》 (中国物理B（英文版）)
年 卷 期：2023年第32卷第4期
页 面：135-141页
核心收录：
学科分类：070207[理学-光学] 07[理学] 08[工学] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 0702[理学-物理学]
基 金：Project supported by the National Key Research and Development Program of China(Grant Nos.2021YFA1400604 and 2021YFB2801400) the National Natural Science Foundation of China(Grant Nos.91850206,62075213,62135001,and 62205328)
主 题：local density of optical states mode spectrum transfer matrix method
摘 要：The local density of optical states(LDOS)is an important physical concept,which can characterize the spontaneous emission of *** order to calculate the LDOS,the relationship between the mode spectrum and the LDOS is ***,based on the transfer matrix method and the effective resonator model,the leaky loss of the leaky mode and the mode spectrum in the one-dimensional photonic bandgap crystal waveguide are calculated,results of which indicate that the mode spectrum can characterize the leaky loss of the leaky *** last,the density of optical states(DOS),and the LDOS in each layer are *** partial DOS and the partial LDOS in the quantum well,related to the fundamental leaky mode,can be used to find out the optimal location of the quantum well in the defect layer to couple more useful photons into the lasing mode for lasers.
维普期刊数据库
同方期刊数据库