Review of solution growth techniques for 4H-SiC single crystal

作     者：Gang-qiang Liang Hao Qian Yi-lin Su Lin Shi Qiang Li Yuan Liu Gang-qiang Liang;Hao Qian;Yi-lin Su;Lin Shi;Qiang Li;Yuan Liu

作者机构：School of Materials Science and EngineeringTsinghua UniversityBeijing 100084China Key Laboratory for Advanced Materials Processing Technology(Ministry of Education)Beijing 100084China 

出 版 物：《China Foundry》 (中国铸造（英文版）)

年 卷 期：2023年第20卷第2期

页      面：159-178页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 070301[理学-无机化学] 0702[理学-物理学] 

基　　金：Chinese Mechanical Engineering Society Ministry of Education of the People's Republic of China, MOE Harbin Institute of Technology, HIT 

主　　题：wide-bandgap semiconductor silicon carbide bulk growth of single crystal process parameters 

摘      要：Silicon carbide(SiC),a group IV compound and wide-bandgap semiconductor for high-power,high-frequency and high-temperature devices,demonstrates excellent inherent properties for power devices and specialized high-end *** growth is thermodynamically favorable for producing SiC single crystal ingots with ultra-low dislocation density as the crystallization is driven by the supersaturation of carbon dissolved in Si-metal ***,solution growth is conducive to the growth of both N-and P-type SiC,with doping concentrations ranging from 10^(14)to 10^(19)cm^(-3).To date,4-inch 4H-SiC substrates with a thickness of 15 mm produced by solution growth have been unveiled,while substrates of 6 inches and above are still under *** on top-seeded solution growth(TSSG),several growth techniques have been developed including solution growth on a concave surface(SGCS),melt-back,accelerated crucible rotation technique(ACRT),two-step growth,and facet ***-parameters of the solution growth including meniscus,solvent design,flow control,dislocation conversion,facet growth,and structures of graphite components make high-quality single crystal growth *** this paper,the solution growth techniques and corresponding parameters involved in SiC bulk growth were reviewed.