The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector
The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector作者机构：Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China
出 版 物：《Chinese Physics B》 (中国物理B（英文版）)
年 卷 期：2007年第16卷第5期
页 面：1276-1279页
核心收录：
基 金：the National Basic Research Program of China (Grant 2002CB311904)
主 题：6H-Silicon carbide UV photodetector absorption coefficient responsivity response time
摘 要：In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.
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