Fabry-Perot interference and piezo-phototronic effect enhanced flexible MoS_(2) photodetector

作     者：Xuexia Chen Xun Yang Qing Lou Yuan Zhang Yancheng Chen Yacong Lu Lin Dong Chong-Xin Shan Xuexia Chen;Xun Yang;Qing Lou;Yuan Zhang;Yancheng Chen;Yacong Lu;Lin Dong;Chong-Xin Shan

作者机构：Henan Key Laboratory of Diamond Optoelectronic Materials and DevicesKey Laboratory of Materials PhysicsMinistry of Educationand School of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第5期

页      面：4395-4402页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：The authors thank for the support of the National Natural Science Foundation of China(Nos.11674290,U1704138,61804136,U1804155,and 11974317) Henan Science Fund for Distinguished Young Scholars(No.212300410020) Key Project of Henan Higher Education(No.21A140001) the Zhengzhou University Physics Discipline Improvement Program,and China Postdoctoral Science Foundation(Nos.2018M630829 and 2019T120630). 

主　　题：flexible photodetector MoS_(2) Fabry-Perot(F-P)interference piezo-phototronic effect 

摘      要：Flexible photodetectors(PDs)are indispensable components for next-generation wearable electronics.Recently,two-dimensional(2D)materials have been implemented as functional flexible optoelectronic devices due to their characteristics of atomically thin layers,excellent flexibility,and strain sensitivity.In this work,we developed a flexible photodetector based on MoS_(2)/NiO heterojunction,and Fabry-Perot(F-P)and piezo-phototronic effect have been employed to enhance the responsivity(R)and external quantum efficiency(EQE)of the devices.The F-P effect is utilized to improve the optical absorption of the MoS_(2),resulting in an enhancement in the photoluminescence(PL)of monolayer MoS_(2) and the EQE of the photodetector by 30 and 130 times,respectively.The flexible photodetector exhibits an ultrahigh detectivity(D*)of 2.6×10^(14) Jones,which is the highest value ever reported for flexible MoS_(2) PDs.The piezo-potential of monolayer MoS_(2) decreases the valence band offset at the interface of MoS_(2)/NiO,which increases the transfer efficiency of the photon-generated carriers significantly.Under 1.17%tensile strain,the R of the flexible photodetector can be enhanced by 271%.This research may provide a universal strategy for the design and performance optimization of 2D materials heterostructures for flexible optoelectronics.