Synthesis of TiN/a-Si_3N_4 thin film by using a Mather type dense plasma focus system

作     者：T. Hussain R. Ahmad N. Khalid Z. A. Umar A. Hussnain 

作者机构：Center For Advanced Studies in Physics (CASP)1-Church RoadGC University Department of PhysicsGovernment College University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2013年第22卷第5期

页      面：381-385页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the HEC  Pakistan 

主　　题：plasma focus TiN/a-Si3N4 films X-ray diffraction 

摘      要：A 2.3 kJ Mather type pulsed plasma focus device was used for the synthesis of a TiN/a-Si3N4 thin film at room temperature. The film was characterized using X-ray diffraction （XRD）, X-ray photoelectron spectroscopy （XPS）, scanning electron microscopy （SEM）, and atomic force microscopy （AFM）. The XRD pattern confirms the growth of polycrystalline TiN thin film. The XPS results indicate that the synthesized film is non-stoichiometric and contains titanium nitride, silicon nitride, and a phase of silicon oxy-nitride. The SEM and AFM results reveal that the surface of the synthesized film is quite smooth with 0.59 nm roughness （root-mean-square）.