Microstructure of a-SiO_x:H

作     者：王永谦 程文超 陈长勇 陈维德 廖显伯 李国华 张世斌 孔光临 刁宏伟 徐艳月 

作者机构：State Laboratory for Surface Physics Institute of Semiconductors & Center for Condensed Matter Physics Chinese Academy of Sciences Beijing China State Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Beijing China 

出 版 物：《Science China Mathematics》 (中国科学：数学（英文版）)

年 卷 期：2002年第45卷第10期

页      面：1320-1328页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：This work was supported by the National Natural Science Foundation of China (Grant Nos. 69976028, 29890217) the State Key Development Program of Basic Research of China (Grant No. 2000028201) 

主　　题：a-SiOx: H, microstructure, bonding configuration. 

摘      要：A set of a-SiOx:H (0.52 x 1.58) films are fabricated by plasma-enhanced-chemical-vapor-deposition (PECVD) method at the substrate temperature of 250°C. The microstructure and local bonding configurations of the films are investigated in detail using micro-Raman scattering, X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR). It is found that the films are structural inhomogeneous, with five phases of Si, Si2O:H, SiO:H, Si2O3:H and SiO2 that coexist. The phase of Si is composed of nonhydrogenated amorphous silicon (a-Si) clusters that are spatially isolated. The average size of the clusters decreases with the increasing oxygen concentration x in the films. The results indicate that the structure of the present films can be described by a multi-shell model, which suggests that a-Si cluster is surrounded in turn by the subshells of Si2O:H, SiO:H, Si2O3:H, and SiO2.