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文献详情 >Ring Oscillator for 60 Meter B... 收藏

Ring Oscillator for 60 Meter Bandwidth

作     者:Rachana Arya B.K.Singh 

作者机构:E.C.E.DepartmentB.T.Kumaon Institute of TechnologyUttrakhnad Technical UniversityDehradun263653UttrakhandIndia Electrical Engineering DepartmentB.T.K.I.T.DwarahatAlmoraUttrakhandIndia 

出 版 物:《Computer Systems Science & Engineering》 (计算机系统科学与工程(英文))

年 卷 期:2023年第46卷第7期

页      面:93-105页

核心收录:

学科分类:080904[工学-电磁场与微波技术] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 

主  题:Ring oscillator power dissipation delay frequency sweep capacitor 

摘      要:The 60-meter band range is tremendously useful in telecommunication,military and governmental *** I.T.U.(International Telecommunication Union)required isolationism to former radio frequency services because the various frequency bands are extremely *** allocation of new frequency bands are a lengthy procedure as well as time *** a result,the researchers use bidirectional,amateur radio frequency communication for 60-meter band,usually the frequency slot of 5250-5450 KHz,although the entire band is not essentially obtainable for all *** transmission and reception of these frequencies,a local oscillator is used in the mixer unit to generate the local signal for mixing the input and reference *** this function different type of oscillators are *** this paper,a three-stage ring oscillator is designed with 1 V *** oscillators(RO)is the base to explore like to identifying,specify with modelling resources in the disparity in behaviour of the circuit in terms of industrialized design and layout *** type of oscillators are free from noise as inductor is not used to the circuit as in LC oscillator,Heartly oscillator,Colpitt and tuned *** present approach of circuit designing,the scaling of CMOS(Complementary Metal Oxide Semiconductor)transistor will moderate,the procedure *** the forthcoming article,a ring oscillator with fixed capacitor(1 pF)and with variable capacitors(1 to 100 pF)is *** frequency analysis with different capacitor is *** total delay of 3-stage oscillator is 4.82 ns with 5.2 MHz oscillation *** overall Power dissipation of the circuit is 1.852μWat 1 V *** simulation analysis is performed on 45 nm CMOS technology with both transistor width are 278 and 420 nm.

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