Comparative Assessment on Microstructure and Properties of in-situ TiC+Ti_(5)Si_(3)Reinforced TiAl-Sn-Zr Matrix Composites by Spark Plasma Sintering and Argon Protected Sintering

作     者：姚辉 许晓静 CAI Chengbin LI Chen CHEN Fenghua LIU Yangguang XIAO Yishui YAO Hui;XU Xiaojing;CAI Chengbin;LI Chen;CHEN Fenghua;LIU Yangguang;XIAO Yishui

作者机构：Institute for Advanced Manufacturing and Modern Equipment TechnologyJiangsu UniversityZhenjiang 212013China 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2023年第38卷第1期

页      面：199-205页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 

基　　金：Funded by the Key Projects of Equipment Pre-research Foundation of the Ministry of Equipment Development of the Central Military Commission of China(No.6140922010201) the Key R&D Plan of Zhenjiang in 2018(No.GY2018021)。 

主　　题：powder metallurgy titanium matrix composites High-temperature oxidation TiC and Ti_(5)Si_(3) Ti-Al-Sn-Zr 

摘      要：The effects of SiC particles(SiCp)on high temperature oxidation behavior of titanium matrix composites(TMCs)under different powder metallurgy processes were investigated.In situ Ti C+Ti_(5)Si_(3)reinforced titanium matrix composites were prepared by discharge plasma sintering(SPS)and argon protective sintering(APS).The results show that the two processes have a negligible effect on the composition and hardness of the samples,but the hardness of the two samples is significantly improved by adding SiCp.The apparent porosity of SPS process is obviously smaller than that of APS process,whereas,the apparent porosity increases slightly with the addition of SiCp.The oxide layer thickness and mass gain of the samples obtained by SPS process are smaller than those obtained by APS process.The oxide thickness and mass gain of both processes are further reduced by adding SiCp.The SPS composites showed the best high temperature oxidation resistance.Therefore,TMCs with Si Cp by SPS can effectively improve the high-temperature oxidation behavior of the materials.