Low Trap Density Para-F Substituted 2D PEA_(2)PbI_(4)(X=Cl,Br,I)Single Crystals with Tunable Optoelectrical Properties and High Sensitive X-Ray Detector Performance

作     者：Jiayu Di Haojin Li Li Chen Siyu Zhang Yinhui Hu Kai Sun Bo Peng Jie Su Xue Zhao Yuqi Fan Zhenhua Lin Yue Hao Peng Gao Kui Zhao Jingjing Chang 

作者机构：State Key Discipline Laboratory of Wide Band Gap Semiconductor TechnologySchool of MicroelectronicsXidian University710071 XianChina Advanced Interdisciplinary Research Center for Flexible ElectronicsAcademy of Advanced Interdisciplinary ResearchXidian University710071 Xi'anChina Key Laboratory of Applied Surface and Collid ChemistryNational Ministry of EducationSchool of Materials Science and EngineeringShaanxi Normal University710119 Xi'anChina CAS Key Laboratory of Design and Assembly of Functional NanostructuresFujian Institute of Research on the Structure of MatterChinese Academy of SciencesFuzhou 350002China 

出 版 物：《Research》 (研究（英文）)

年 卷 期：2023年第2022卷第1期

页      面：273-283页

核心收录：

学科分类：0810[工学-信息与通信工程] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 080402[工学-测试计量技术及仪器] 0835[工学-软件工程] 081002[工学-信号与信息处理] 

基　　金：supported by National Natural Science Foundation of China(52192610) National Key Research and Development Program of China(Grant 2021YFA0715600 and 2018YFB2202900) Key Research and Development Program of Shaanxi Province(Grant 2020GY-310) Wuhu and Xidian University special fund for industry-university-research cooperation(Project No.XWYCXY-012021004) the 111 Project(Grant B12026),the Fundamental Research Funds for the Central Universities and the Innovation Fund of Xidian University 

主　　题：properties stability substitution 

摘      要：Exploring halogen engineering is of great significance for reducing the density of defect states in crystals of organic-inorganic hybrid perovskites and hence improving the crystal ***,high-quality single crystals of PEA_(2)PbI_(4)(X=CI,Br,I)and their para-F(p-F)substitution analogs are prepared using the facile solution method to study the effects of both p-F substitution and halogen anion *** p-F substitution,the triclinic PEA_(2)PbX_(4)(X=Cl,Br)and cubic PEA_(2)PbX_(4)(X=I)crystals unifies to monoclinic crystal structure for p-F-PEA_(2)PbX_(4)(X=Cl,Br,I)*** p-F substitution and halogen engineering,together with crystal structure variation,enable the tunability of optoelectrical ***,after the p-F substitution,the energy levels are lowered with increased Fermi levels,and the bandgaps of p-F-PEA_(2)PbX_(4)(X=Cl,Br,I)are slightly *** from the enhancement of the charge transfer and the reduced trap density by p-F substitution and halogen anion engineering,the average carrier lifetime of the p-F-PEA_(2)PbI_(4)is obviously *** with PEA_(2)PbI_(4)the X-ray detector based on p-F-PEA_(2)PbI_(4)single crystals exhibits higher radiation stability under high-dose X-ray irradiation,implying long-term operando stability.