Growth mechanisms of interfacial carbides in solid-state reaction between single-crystal diamond and chromium
作者机构：Institute of Manufacturing EngineeringHuaqiao UniversityXiamen 361021China School of Materials Science and EngineeringLanzhou University of TechnologyLanzhou 730000China School of Mechanical and Mining EngineeringThe University of QueenslandBrisbaneQLD 4072Australia
出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)
年 卷 期：2023年第144卷第13期
页 面：138-149页
核心收录：
学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0827[工学-核科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学]
基 金：supported by the National Natural Science Foundation of China (No.51835004) the National Technology Development Project in Fujian province (No.2021L3012) funding support from Australia Research Council (ARC)through the Discovery Project Program (No.DP210102061)
主 题：Solid-state Interface reaction Synthetic diamond Phase transformation Chromium carbide
摘 要：Interfacial bonding is one of the most challenging issues in the fabrication,and hence comprehensively influences the properties of diamond-based metal matrix composites(MMCs)*** this work,solid-state(S/S)interface reaction between single-crystal synthetic diamond and chromium(Cr)metal was critically examined with special attention given to unveil the role of crystal orientation in the for-mation and growth of interfacial *** has been revealed that catalytically converted carbon(CCC)was formed prior to chromium carbides,which is counterintuitive to previous *** 7 C 3 was the first carbide formed in the S/S interface reaction,aided by the relaxation of diamond lattices that re-duces the interfacial *** Cr 7 C 3 and Cr 3 C 2 carbides were formed at 600 and 800℃,respectively,with the growth preferred on diamond(100)plane,because of its higher density of surface defects than(111)*** strain distribution was quasi-quantitively measured using windowed Fourier Transform-Geometric Phase Analysis(WFT-GPA)analysis and an ameliorated strain concentration was found after the ripening of interfacial *** morphologies of Cr_(3)C_(2) grown on diamond(100)and(111)planes were perceived after S/S interface reaction at 1000℃,which is reported for the first *** underlying mechanisms of Cr-induced phase transformation on diamond surface,as well as the crystal orientation dependent growth of interfacial carbides were unveiled using the first-principles *** formation and growth mechanisms of Cr_(3)C_(2) were elucidated using SEM,TEM and XRD ***,an approach for tailoring the interfacial microstructure between synthetic diamond and bonding metals was proposed.
维普期刊数据库