A universal charge-compensating strategy for high-energy-density pseudocapacitors

作     者：Baoyi Yin Jiaqi Zhang Yuanhui Su Yu Huan Liang Hao Chen Wang Xun Hu Tao Wei Baoyi Yin;Jiaqi Zhang;Yuanhui Su;Yu Huan;Liang Hao;Chen Wang;Xun Hu;Tao Wei

作者机构：School of Material Science and EngineeringUniversity of Jinan336 Nanxinzhuang West RoadJinan 250022ShandongChina School of MicroelectronicsDalian University of TechnologyDalian 116024LiaoningChina Shanghai Key Laboratory of Multiphase Flow and Heat Transfer in Power EngineeringSchool of Energy and Power EngineeringUniversity of Shanghai for Science and TechnologyShanghai 200093China State Key Laboratory of ASIC and SystemsSchool of MicroelectronicsFudan UniversityShanghai 200433China 

出 版 物：《Journal of Energy Chemistry》 (能源化学（英文版）)

年 卷 期：2023年第78卷第3期

页      面：333-339,I0010页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Natural Science Foundation of China(51972146 52072150) 

主　　题：Supercapacitors Universal charge-compensating strategy Changed valence state Increased Faradaic charge storage sites 

摘      要：For pseudocapacitive electrode materials(PseEMs),despite much progress having been made in achieving both high power density and high energy density,a general strategy to guide the enhancement of intrinsic capacitive properties of PseEMs remains ***,we demonstrate a universal chargecompensating strategy to improve the charge-storage capability of PseEMs intrinsically:ⅰ) in the electrolyte with anion as charge carriers(such as OH-),reducing the multivalent cations of PseEMs into lower valences could create more reversible low-to-high valence redox cou ples to promote the intercalation of the anions;ⅱ) in the electrolytes with cation as charge carriers(such as H^(+),Li^(+),Na^(+)),oxidizing the multivalent cations of PseEMs into higher valences could introduce more reversible high-to-low valence redox couples to promote the intercalation of the *** we demonstrated that the improved intrinsic charge-storage capability for PseEMs originates from the increased Faradaic charge storage sites.