Gate tunable spatial accumulation of valley-spin in chemical vapor deposition grown 40°-twisted bilayer WS2

作     者：Siwen Zhao Gonglei Shao Zheng Vitto Han Song Liu Tongyao Zhang Siwen Zhao;Gonglei Shao;Zheng Vitto Han;Song Liu;Tongyao Zhang

作者机构：Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyang 110010China Institute of Chemical Biology and NanomedicineState Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China State Key Laboratory of Quantum Optics and Quantum Optics DevicesInstitute of Opto-ElectronicsShanxi UniversityTaiyuan 030006China Collaborative Innovation Center of Extreme OpticsShanxi UniversityTaiyuan 030006China 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2023年第44卷第1期

页      面：74-78页

核心收录：

学科分类：081702[工学-化学工艺] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：supported by the National Key R&D Program of China(No.2019YFA0307800) financial support from the National Natural Science Foundation of China(Nos.22175060,21975067,92265203,11974357,12004259,12204287,U1932151) Natural Science Foundation of Hunan Province of China(Nos.2021JJ10014,2021JJ30092) China Postdoctoral Science Foundation(Grant No.2022M723215) 

主　　题：transition metal dichalcogenides valleytronic devices light-valley interactions valley Hall effect 

摘      要：The emerging two-dimensional materials,particularly transition metal dichalcogenides(TMDs),are known to exhibit valley degree of freedom with long valley lifetime,which hold great promises in the implementation of valleytronic ***,light-valley interactions have attracted attentions in these systems,as the electrical generation of valley magnetization can be readily achieved—a rather different route toward magnetoelectric(ME)effect as compared to that from conventional electron ***,so far,the moiré patterns constructed with twisted bilayer TMDs remain largely unexplored in regard of their valley spin polarizations,even though the symmetry might be distinct from the AB stacked bilayer ***,we study the valley Hall effect(VHE)in 40°-twisted chemical vapor deposition(CVD)grown WS2moiré transistors,using optical Kerr rotation measurements at 20 *** observe a clear gate tunable spatial distribution of the valley carrier imbalance induced by the VHE when a current is exerted in the system.