Taming quantum dots’nucleation and growth enables stable and efficient blue-light-emitting devices

作     者：ZHIWEI MA JUNXIA HU LIPING TANG BINGBING LYU ZHiWEI MA;JUNXIA HU;LIPING TANG;AND BINGBING LYU

作者机构：Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China Key Laboratory for Special Functional Materials of the Ministry of EducationHenan UniversityKaifeng 475004China School of Information EngineeringXinyang Agriculture and Forestry UniversityXinyang 464000China Department of PhysicsSouth University of Science and TechnologyShenzhen 518055China 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2022年第10卷第10期

页      面：2359-2365页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：China Postdoctoral Science Foundation (2022M712326). 

主　　题：quantum blue enable 

摘      要：Controlling quantum dots’emission,nanostructure,and energy level alignment to achieve stable and efficient blue emission is of great significance for electroluminescence devices but remains a challenge.Here,a series of blue ZnCdSeS/ZnS quantum dots was optimized in preparation by taming their nucleation and growth kinetics.Controlling anion precursor reactive properties to modulate quantum dots’nucleation and growth tailors their alloy core and continuous gradient energy band nanostructure.These results not only elevate the thermal stability of blue quantum dots but also further enhance the injection/transportation of carriers and improve the radiative recombination efficiency in the device.The blue ZnCdSeS/ZnS quantum dots applied in light-emitting devices show superior performance,including maximum current efficiency and external quantum efficiency of,respectively,8.2 cd/A and 15.8%for blue,2.6 cd/A and 10.0%for blue-violet,and 10.9 cd/A and 13.4%for sky-blue devices.The blue and sky-blue devices exhibit lifetimes of more than 10,000 h.The proposed methodology for tailoring quantum dots is expected to pave new guidelines for further facilitating visible optoelectronic device exploration.