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文献详情 >手性晶体CoSi中拓扑费米弧的电荷不稳定性 收藏

手性晶体CoSi中拓扑费米弧的电荷不稳定性

Charge instability of topological Fermi arcs in chiral crystal CoSi

作     者:饶志成 胡全欣 田尚杰 曲青 陈聪润 高顺业 袁震宇 唐岑瑶 樊文辉 黄杰瑞 黄耀波 王利 张露 李坊森 王克东 杨槐馨 翁红明 钱天 徐金朋 蒋坤 雷和畅 孙煜杰 丁洪 Zhicheng Rao;Quanxin Hu;Shangjie Tian;Qing Qu;Congrun Chen;Shunye Gao;Zhenyu Yuan;Cenyao Tang;Wenhui Fan;Jierui Huang;Yaobo Huang;Li Wang;Lu Zhang;Fangsen Li;Kedong Wang;Huaixin Yang;Hongming Weng;Tian Qian;Jinpeng Xu;Kun Jiang;Hechang Lei;Yu-Jie Sun;Hong Ding

作者机构:Beijing National Laboratory for Condensed Matter Physics and Institute of PhysicsChinese Academy of SciencesBeijing 100190China Department of PhysicsSouthern University of Science and TechnologyShenzhen 518055China School of Physical SciencesUniversity of Chinese Academy of SciencesBeijing 100049China School of Materials Science and EngineeringAnhui UniversityHefei 230601China Laboratory for Neutron Scatteringand Beijing Key Laboratory of Optoelectronic Functional Materials MicroNano DevicesDepartment of PhysicsRenmin University of ChinaBeijing 100872China Shanghai Synchrotron Radiation FacilityShanghai Advanced Research InstituteChinese Academy of SciencesShanghai 201204China Vacuum Interconnected Nanotech Workstation(Nano-X)Suzhou Institute of Nano-Tech and Nano-Bionics(SINANO)Chinese Academy of SciencesSuzhou 215123China Songshan Lake Materials LaboratoryDongguan 523808China CAS Center for Excellence in Topological Quantum ComputationUniversity of Chinese Academy of SciencesBeijing 100190China 

出 版 物:《Science Bulletin》 (科学通报(英文版))

年 卷 期:2023年第68卷第2期

页      面:165-172,M0003页

核心收录:

学科分类:07[理学] 0702[理学-物理学] 

基  金:supported by the National Natural Science Foundation of China(U1832202,11888101,11920101005,12141402,and 12274459) the Chinese Academy of Sciences(QYZDB-SSW-SLH043,XDB33020100,and XDB28000000) the Beijing Municipal Science and Technology Commission(Z171100002017018,and Z200005) the National Key R&D Program of China(2018YFE0202600,2022YFA1403100,and 2022YFA1403800) the Fundamental Research Funds for the Central Universities and Research Funds of Renmin University of China(RUC)(18XNLG14,19XNLG13,19XNLG17,and 20XNH062) the Synergic Extreme Condition User Facility,Beijing,China Beijing National Laboratory for Condensed Matter Physics 

主  题:电荷密度波 有序态 拓扑绝缘体 超导态 狄拉克 金属态 表面态 

摘      要:拓扑边界态出现在拓扑非平庸态和平庸态之间的边界上,通常是无间隙的或被称为金属态.例如,拓扑绝缘体的表面态是无间隙的狄拉克态.这些金属拓扑边界态往往可以被近自由费米子很好的描述.如果拓扑边界态具有显著的电子-电子相互作用的行为,无间隙的边界态会转变为有间隙的有序态,例如密度波态或超导态,这在理论上是非常有趣的,但目前还缺少相关的实验证据.本文报道了在Co Si(001)表面观察到了电子-电子相互作用驱动的、在拓扑边界态上形成的非公度电荷密度波(CDW). CDW的波矢随温度的变化而变化,这与拓扑表面费米弧随温度的演化相吻合. CDW相的取向由费米弧的手性决定,这暗示了CDW与费米弧之间存在直接的联系.该发现将促进在拓扑材料边界上寻找更多相互作用驱动的有序态,例如超导和磁性.

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