Investigation of GaN-based light-emitting diodes using a p-GaN/i-InGaN short-period superlattice structure as last quantum barrier

作     者：LIU XiaoPing FAN GuangHan ZHENG ShuWen GONG ChangChun LU TaiPing ZHANG YunYan XU YiQin ZHANG Tao 

作者机构：Institute of Opto-electronic Materials and TechnologySouth China Normal University 

出 版 物：《Science China(Technological Sciences)》 (中国科学（技术科学英文版）)

年 卷 期：2013年第56卷第1期

页      面：98-102页

核心收录：

学科分类：0810[工学-信息与通信工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China (Grant No. 61176043) the Doctoral Fund of Ministry of Educationof China (Grant No. 20060574007) the Production and Research Projectof Guangdong Province and Ministry of Education (Grant Nos.2009B090300338,2010B090400192) the LED Industry Project of Special Funds of Strategic Emerging Industries of Guangdong Province in 2011(Grant No. 2010A081002005) the LED Industry Project of Special Fundsof Strategic Emerging Industries of Guangdong Province in 2012 (GrantNo. 2011A081301003) the Science and Technology Program of Guangzhou Huadu District (Grant Nos. HD10CXY-G002,HD10CXY-G013) 

主　　题：超晶格结构 发光二极管 量子势垒 GaN 短周期 蓝色LED 仿真软件 数值研究 

摘      要：In this work,GaN-based light-emitting diodes(LEDs) with a p-GaN/i-InGaN short-period superlattice(SPSL) structure,p-GaN and undoped GaN last quantum barrier(LQB) have been numerically investigated by using the APSYS simulation *** has been found that the efficiency droop is significantly improved when the undoped GaN LQB in a typical blue LED is replaced by a p-GaN/i-InGaN SPSL *** to the simulation analysis,using the p-GaN/i-InGaN SPSL structure as LQB is beneficial to increasing the hole injection efficiency and decreasing the electron current ***,the radiative recombination and optical power are enhanced.