Excited state biexcitons in monolayer WSe_(2)driven by vertically grown graphene nanosheets with high-density electron trapping edges

作     者：Bo Wen Da-Ning Luo Ling-Long Zhang Xiao-Lin Li Xin Wang Liang-Liang Huang Xi Zhang Dong-Feng Diao Bo Wen;Da-Ning Luo;Ling-Long Zhang;Xiao-Lin Li;Xin Wang;Liang-Liang Huang;Xi Zhang;Dong-Feng Diao

作者机构：Institute of Nanosurface Science and Engineering Guangdong Provincial Key Laboratory of Micro/Nano Optomechatronics EngineeringShenzhen UniversityShenzhen 518060China College of PhysicsNanjing University of Aeronautics and AstronauticsKey Laboratory of Aerospace Information Materials and Physics(NUAA)MIITNanjing 211106China Research Center of Medical Plasma TechnologyShenzhen UniversityShenzhen 518060China 

出 版 物：《Frontiers of physics》 (物理学前沿（英文版）)

年 卷 期：2023年第18卷第3期

页      面：103-112页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：The authors gratefully acknowledge the financial support from the National Natural Science Foundation of China(Nos.62104155,52275565,52005343,and 62204117)of China the Natural Science Foundation of Guangdong Province(No.2022A1515011667) the financial support from Jiangsu Province Science Foundation for Youths(No.BK20210275) Guangdong Kangyi Special Fund(No.2020KZDZX1173) 

主　　题：excited state biexcitons monolayer WSe_(2) vertically graphene electron trapping edges 

摘      要：Interface engineering in atomically thin transition metal dichalcogenides(TMDs)is becoming an important and powerful technique to alter their properties,enabling new optoelectronic applications and quantum *** engineering in a monolayer WSe_(2)sample via introduction of high-density edges of standing structured graphene nanosheets(GNs)is realized.A strong photoluminescence(PL)emission peak from intravalley and intervalley trions at about 750 nm is observed at the room temperature,which indicated the heavily p-type doping of the monolayer WSe_(2)/thin graphene nanosheet-embedded carbon(TGNEC)film *** also successfully triggered the emission of biexcitons(excited state biexciton)in a monolayer WSe_(2),via the electron trapping centers of edge quantum wells of a TGNEC *** PL emission of a monolayer WSe_(2)/GNEC film is quenched by capturing the photoexcited electrons to reduce the electron-hole recombination *** study can be an important benchmark for the extensive understanding of light–matter interaction in TMDs,and their dynamics.