Diamond nucleation on surface of C_60 thin layers

作     者：杨国伟 袁放成 刘大军 何金田 张兵临 

作者机构：Institute of Modern Physics Xiangtan University Xiangtan 411105 China Department of Physics Zhengzhou University Zhengzhou 450052 China 

出 版 物：《Science China Mathematics》 (中国科学：数学（英文版）)

年 卷 期：1997年第40卷第6期

页      面：668-672页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

主　　题：C60 diamond nucleation. 

摘      要：Diamond nucleation on the surface of C60 thin layers and intermediate layer of Si substrates are studied by scanning electron microscopy (SEM). The cross-section SEM images of diamond films show that diamond grains really nucleate on the surface of C60 thin layers. The SEM images of diamond nucleating sites show the nucleating aggregation of diamond on C60 surfaces. The preferential oriented diamond films are observed. The plasma pre-treatment of C60 sublimating layers is a key factor for diamond nucleation.