Interface effect on superlattice quality and optical properties of InAs/GaSb type-Ⅱ superlattices grown by molecular beam epitaxy

作     者：刘昭君 祝连庆 郑显通 柳渊 鹿利单 张东亮 Zhaojun Liu;Lian-Qing Zhu;Xian-Tong Zheng;Yuan Liu;Li-Dan Lu;Dong-Liang Zhang

作者机构：The School of Opto-Electronic EngineeringChangchun University of Science and TechnologyChangchun 130022China Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and InstrumentBeijing Information Science&Technology UniversityBeijing 100192China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第12期

页      面：671-676页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project supported by the Beijing Scholars Program(Grant No.74A2111113) the Research Project of Beijing Education Committee(Grant No.KM202111232019) the National Natural Science Foundation of China(Grant No.62105039) the Research Project of Beijing Information Science&Technology University(Grant No.2022XJJ07) 

主　　题：InAs/GaSb type-Ⅱsuperlattice molecular beam epitaxy interface mid-wave infrared 

摘      要：We systematically investigate the influence of InSb interface(IF)engineering on the crystal quality and optical properties of strain-balanced InAs/GaSb type-Ⅱsuperlattices(T2SLs).The type-Ⅱsuperlattice structure is 120 periods InAs(8 ML)/GaSb(6 ML)with different thicknesses of InSb interface grown by molecular beam epitaxy(MBE).The highresolution x-ray diffraction(XRD)curves display sharp satellite peaks,and the narrow full width at half maximum(FWHM)of the 0th is only 30-39 *** high-resolution cross-sectional transmission electron microscopy(HRTEM)characterization,the InSb heterointerfaces and the clear spatial separation between the InAs and GaSb layers can be more intuitively *** the InSb interface thickness increases,the compressive strain increases,and the surface“bright spotsappear to be more apparent from the atomic force microscopy(AFM)***,photoluminescence(PL)measurements verify that,with the increase in the strain,the bandgap of the superlattice *** optimizing the InSb interface,a high-quality crystal with a well-defined surface and interface is obtained with a PL wavelength of 4.78μm,which can be used for mid-wave infrared(MWIR)detection.