Effects of an attached functionally graded layer on the electromechanical behaviors of piezoelectric semiconductor fibers

作     者：Kai FANG Nian LI Peng LI Zhenghua QIAN V.KOLESOV I.KUZNETSOVA Kai FANG;Nian LI;Peng LI;Zhenghua QIAN;V.KOLESOV;I.KUZNETSOVA

作者机构：State Key Laboratory of Mechanics and Control of Mechanical StructuresCollege of Aerospace EngineeringNanjing University of Aeronautics and AstronauticsNanjing 210016China Nanjing University of Aeronautics and Astronautics Shenzhen Research InstituteShenzhen 518057Guangdong ProvinceChina Kotel’nikov Institute of Radio Engineering and Electronics of Russian Academy of SciencesMoscow 125009Russia 

出 版 物：《Applied Mathematics and Mechanics(English Edition)》 (应用数学和力学（英文版）)

年 卷 期：2022年第43卷第9期

页      面：1367-1380页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0701[理学-数学] 0702[理学-物理学] 0801[工学-力学（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(Nos.12061131013,11972276,1211101401,12172171,and 12102183) the State Key Laboratory of Mechanics and Control of Mechanical Structures of Nanjing University of Aeronautics and Astronautics(No.MCMS-E-0520K02) the Fundamental Research Funds for the Central Universities of China(Nos.NE2020002 and NS2019007) the National Natural Science Foundation of China for Creative Research Groups(No.51921003) the Postgraduate Research&Practice Innovation Program of Jiangsu Province of China(No.KYCX210179) the National Natural Science Foundation of Jiangsu Province of China(No.BK20211176) the Local Science and Technology Development Fund Projects Guided by the Central Government of China(No.2021Szvup061) the Jiangsu High-Level Innovative and Entrepreneurial Talents Introduction Plan(Shuangchuang Doctor Program,No.JSSCBS20210166)。 

主　　题：piezoelectric semiconductor(PS) functionally graded(FG)material composite structure PN junction 

摘      要：In this paper,we propose a specific two-layer model consisting of a functionally graded(FG)layer and a piezoelectric semiconductor(PS)layer.Based on the macroscopic theory of PS materials,the effects brought about by the attached FG layer on the piezotronic behaviors of homogeneous n-type PS fibers and PN junctions are investigated.The semi-analytical solutions of the electromechanical fields are obtained by expanding the displacement and carrier concentration variation into power series.Results show that the antisymmetry of the potential and electron concentration distributions in homogeneous n-type PS fibers is destroyed due to the material inhomogeneity of the attached FG layer.In addition,by creating jump discontinuities in the material properties of the FG layer,potential barriers/wells can be produced in the middle of the fiber.Similarly,the potential barrier configuration near the interface of a homogeneous PS PN junction can also be manipulated in this way,which offers a new choice for the design of PN junction based devices.