Significantly improved high k dielectric performance:Rare earth oxide as a passivation layer laminated with TiO_(2) film

作     者：Shuan Li Weipeng Wang Youyu Lin Linlin Wang Xingguo Li Shuan Li;Weipeng Wang;Youyu Lin;Linlin Wang;Xingguo Li

作者机构：Beijing National Laboratory of Molecular SciencesState Key Laboratory of Rare Earth Materials Chemistry and ApplicationsCollege of Chemistry and Molecular EngineeringPeking UniversityBeijing 100871China Beijing National Laboratory of Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China 

出 版 物：《Journal of Rare Earths》 (稀土学报（英文版）)

年 卷 期：2023年第41卷第9期

页      面：1376-1384,I0004页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the China Postdoctoral Science Foundation (BX20200004) the National Key R&D Program of China (2017YFB0405902) the National Natural Science Foundation of China (51971004) 

主　　题：Rare earth oxides Gate dielectric Thin film Sputtering Passivation layer 

摘      要：In order to achieve a super gate dielectric performance,rare earth oxides featuring for large band gap,good thermodynamic stability and relatively high k value were selected to be laminated with TiO_(2)film to prepare bilayer dielectric *** an example,the microstructure,morphology,band gap structure and electrical performance of TiO_(2)-Y_(2)O_(3)bilayer films were systematically *** show that stacking sequence of TiO_(2)and Y_(2)O_(3)sublayers has a significant impact on the dielectric performance and Y_(2)O_(3)film as a passivation layer can effectively improve electrical ***,the electrical behaviors analysis of TiO_(2)-Y_(2)O_(3),Y_(2)O_(3)-TiO_(2),Y_(2)O_(3)and TiO_(2)samples was carried out by impedance spectra and equivale nt *** result shows that TiO_(2)-Y_(2)O_(3)/Si sample holds the largest internal re sistance of 74665Ωamong four ***,the most outstanding properties of Pt/TiO_(2)-Y_(2)O_(3)/Si capacitor are achieved by varying the thickness of sublayers and annealing temperature.500℃-annealed bilayer film with 17 nm-TiO_(2)and 3-nm Y_(2)O_(3)displays a k value of 28.24,which is more than 1.4 times that of current commercial HfO_(2).Further,Schottky emission was determined to be leakage current transport mechanism for TiO_(2)-Y_(2)O_(3)bilayer *** by this result,the electrical performance of more general Pt/TiO_(2)-REOs/Si MOS capacitors(RE=Sc,La,Ce,Gd and Pr)was *** combination of TiO_(2)film and REOs passivation layer with the satisfying performance provides promising candidates for future Si-based integrated circuit(IC).